STF4N62K3 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 4.47 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.49 EUR |
| 2000+ | 1.46 EUR |
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Technische Details STF4N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 3.8A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
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STF4N62K3 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 620V 3.8A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
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