
STF57N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 13.13 EUR |
50+ | 7.69 EUR |
100+ | 7.26 EUR |
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Technische Details STF57N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 42A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V.
Weitere Produktangebote STF57N65M5 nach Preis ab 8.17 EUR bis 13.89 EUR
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STF57N65M5 | Hersteller : STMicroelectronics |
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auf Bestellung 2476 Stücke: Lieferzeit 10-14 Tag (e) |
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STF57N65M5 | Hersteller : STMicroelectronics NV |
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auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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STF57N65M5 | Hersteller : STMicroelectronics |
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STF57N65M5 | Hersteller : STMicroelectronics |
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STF57N65M5 | Hersteller : STMicroelectronics |
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STF57N65M5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 42A Pulsed drain current: 168A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF57N65M5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 42A Pulsed drain current: 168A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |