STF5N80K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.44 EUR |
| 2000+ | 1.34 EUR |
| 5000+ | 1.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STF5N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 4A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STF5N80K5 nach Preis ab 1.77 EUR bis 5.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STF5N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 969 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STF5N80K5 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 4A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 4A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.02 EUR |
| 50+ | 2.46 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.77 EUR |


