
STF7N65M2 STMicroelectronics
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.66 EUR |
10+ | 1.85 EUR |
100+ | 1.72 EUR |
500+ | 1.45 EUR |
1000+ | 1.23 EUR |
2000+ | 1.14 EUR |
5000+ | 1.11 EUR |
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Technische Details STF7N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V.
Weitere Produktangebote STF7N65M2
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STF7N65M2 | Hersteller : STMicroelectronics |
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STF7N65M2 | Hersteller : STMicroelectronics |
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STF7N65M2 | Hersteller : STMicroelectronics |
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STF7N65M2 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 1.15Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF7N65M2 | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF7N65M2 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 1.15Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |