STF80N600K6 STMicroelectronics
Hersteller: STMicroelectronics
Description: N-CHANNEL 800 V, 515 MOHM TYP.,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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Technische Details STF80N600K6 STMicroelectronics
Description: N-CHANNEL 800 V, 515 MOHM TYP.,, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Supplier Device Package: TO-220FP, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V, Power Dissipation (Max): 23W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V.
Weitere Produktangebote STF80N600K6 nach Preis ab 1.76 EUR bis 4.86 EUR
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STF80N600K6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET |
auf Bestellung 1043 Stücke: Lieferzeit 10-14 Tag (e) |
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| STF80N600K6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
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