STF8NK100Z STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 8.48 EUR |
| 10+ | 5.58 EUR |
| 100+ | 4.95 EUR |
| 500+ | 4.56 EUR |
| 1000+ | 3.66 EUR |
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Technische Details STF8NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 6.5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 1.85Ohm @ 3.15A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V.
Weitere Produktangebote STF8NK100Z nach Preis ab 3.41 EUR bis 9.12 EUR
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STF8NK100Z | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 1000V 6.5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.85Ohm @ 3.15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
auf Bestellung 1719 Stücke: Lieferzeit 10-14 Tag (e) |
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| STF8NK100Z | Hersteller : ST |
Transistor N-Channel MOSFET; 1000V; 1000V; 30V; 1,85Ohm; 6,5A; 40W; -55°C ~ 150°C; STF8NK100Z TSTF8NK100z Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| STF8NK100Z | Hersteller : STM |
TO220 Група товару: Транзистори Од. вим: шт |
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