Technische Details STF8NM50N STMicroelectronics
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 500V, rohsCompliant: YES, Dauer-Drainstrom Id: 5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 20W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.73ohm.
Weitere Produktangebote STF8NM50N nach Preis ab 0.71 EUR bis 5.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STF8NM50N | STMicroelectronics |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STF8NM50N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 790mΩ Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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STF8NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 5A TO220FPInput Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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STF8NM50N | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, DurchsteckmontagetariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 20W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.73ohm |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF8NM50N |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.13 EUR |
| 2000+ | 1.05 EUR |
| STF8NM50N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 1.63 EUR |
| 88+ | 0.98 EUR |
| 104+ | 0.82 EUR |
| 114+ | 0.75 EUR |
| 119+ | 0.71 EUR |
| STF8NM50N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.93 EUR |
| 50+ | 2.42 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.74 EUR |
| STF8NM50N |
![]() |
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 20W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.73ohm
Description: STMICROELECTRONICS - STF8NM50N - Leistungs-MOSFET, n-Kanal, 500 V, 5 A, 0.73 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 20W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.73ohm
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 47+ | 5.4 EUR |
| 89+ | 2.62 EUR |
| 106+ | 2.02 EUR |





