STF9NK80Z
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auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STF9NK80Z
Description: MOSFET N-CH 800V 7.5A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STF9NK80Z
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STF9NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 7.5A TO220FP Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STF9NK80Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 7.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 7.5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH