STFI260N6F6 STMicroelectronics

Description: MOSFET N-CH 60V 80A I2PAKFP, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAKFP (TO-281), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 41.7W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Full Pack, I2PAK, Packaging: Tube.