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STFI9N80K5

STFI9N80K5 STMicroelectronics

STF%28I%299N80K5.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.59 EUR
10+ 2.98 EUR
100+ 2.38 EUR
500+ 2.01 EUR
1000+ 1.71 EUR
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Technische Details STFI9N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 7A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-281 (I2PAKFP), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V.

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STFI9N80K5 STFI9N80K5 Hersteller : STMicroelectronics en.DM00229462-1225048.pdf MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a I2PAKFP package
auf Bestellung 700 Stücke:
Lieferzeit 14-28 Tag (e)