STFU15NM65N STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.35 Ohm typ 12 A MDmesh II Power MOSFET in TO-220FP ultra narr
| Anzahl | Preis |
|---|---|
| 1+ | 8.08 EUR |
| 10+ | 7.97 EUR |
| 25+ | 4.42 EUR |
| 100+ | 4.07 EUR |
| 500+ | 3.48 EUR |
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Technische Details STFU15NM65N STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP, Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc).
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STFU15NM65N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220FP Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) |
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