STFU24N60M2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 4+ | 5.1 EUR |
| 50+ | 2.55 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.87 EUR |
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Technische Details STFU24N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V.
Weitere Produktangebote STFU24N60M2 nach Preis ab 1.71 EUR bis 5.16 EUR
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STFU24N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra n |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
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