STFW2N105K5 STMicroelectronics

Description: MOSFET N-CH 1050V 2A ISOWATT, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 1050 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.