STFW2N105K5 STMicroelectronics
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 47+ | 3.16 EUR |
| 85+ | 1.68 EUR |
| 100+ | 1.59 EUR |
| 200+ | 1.52 EUR |
| 500+ | 1.46 EUR |
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Technische Details STFW2N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V.
Weitere Produktangebote STFW2N105K5 nach Preis ab 2.23 EUR bis 5.05 EUR
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STFW2N105K5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 1050V 2A ISOWATTPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 1050 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V |
auf Bestellung 502 Stücke: Lieferzeit 10-14 Tag (e) |
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STFW2N105K5 | Hersteller : STMicroelectronics |
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| STFW2N105K5 | Hersteller : STMicroelectronics |
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STFW2N105K5 | Hersteller : STMicroelectronics |
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