STFW2N105K5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 47+ | 3.76 EUR |
| 85+ | 2.05 EUR |
| 100+ | 1.96 EUR |
| 200+ | 1.92 EUR |
| 500+ | 1.88 EUR |
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Technische Details STFW2N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 1050 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STFW2N105K5 nach Preis ab 2.65 EUR bis 6.06 EUR
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STFW2N105K5 | STMicroelectronics |
 Description: MOSFET N-CH 1050V 2A ISOWATTInput Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 1050 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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| STFW2N105K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 1050V 2A ISOWATT
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 1050 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.06 EUR |
| 30+ | 3.27 EUR |
| 120+ | 2.65 EUR |