STFW38N65M5 STMicroelectronics
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 3.83 EUR |
| 50+ | 2.92 EUR |
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Technische Details STFW38N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 30A ISOWATT, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V.
Weitere Produktangebote STFW38N65M5 nach Preis ab 4.96 EUR bis 10.21 EUR
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STFW38N65M5 | Hersteller : STMicroelectronics |
 MOSFETs N-channel 650 V, 0.073 Ohm typ 30 A MDmesh M5 Power MOSFET in TO-3PF package |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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STFW38N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-3PF Tube |
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| STFW38N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-3PF Tube |
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| STFW38N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 57W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 120A Power dissipation: 57W Case: TO3PF Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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STFW38N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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STFW38N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 30A ISOWATT Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STFW38N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 57W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 120A Power dissipation: 57W Case: TO3PF Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |