STFW69N65M5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 22.04 EUR |
| 10+ | 14.41 EUR |
| 100+ | 12.09 EUR |
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Technische Details STFW69N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 58A ISOWATT, Input Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STFW69N65M5 nach Preis ab 12.98 EUR bis 23.02 EUR
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STFW69N65M5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 58A ISOWATTInput Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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