STFW8N120K5 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.02 EUR |
| 10+ | 8.22 EUR |
| 100+ | 6.09 EUR |
| 600+ | 5.9 EUR |
| 1200+ | 5.46 EUR |
| 2700+ | 5.44 EUR |
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Technische Details STFW8N120K5 STMicroelectronics
Description: MOSFET N-CH 1200V 6A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-3PF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V.
Weitere Produktangebote STFW8N120K5 nach Preis ab 5.29 EUR bis 5.88 EUR
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| STFW8N120K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1.2kV; 6A; 48W; TO3PF Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 48W Case: TO3PF Gate-source voltage: 30V On-state resistance: 2Ω Mounting: THT Gate charge: 13.7nC Kind of channel: enhancement Technology: MOSFET |
auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
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STFW8N120K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 6A 3-Pin(3+Tab) TO-3PF Tube |
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| STFW8N120K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 6A 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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STFW8N120K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1200V 6A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V |
Produkt ist nicht verfügbar |