STFW8N120K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
| Anzahl | Preis |
|---|---|
| 1+ | 11.02 EUR |
| 10+ | 8.15 EUR |
| 100+ | 6.58 EUR |
| 600+ | 5.84 EUR |
| 1200+ | 5.02 EUR |
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Technische Details STFW8N120K5 STMicroelectronics
Description: MOSFET N-CH 1200V 6A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
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STFW8N120K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1200V 6A TO3PF Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
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