STGAP2SICSANCTR STMicroelectronics
Hersteller: STMicroelectronics
Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs
| Anzahl | Preis |
|---|---|
| 1+ | 4.42 EUR |
| 10+ | 2.87 EUR |
| 25+ | 2.6 EUR |
| 100+ | 2.2 EUR |
| 250+ | 2.08 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.56 EUR |
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Technische Details STGAP2SICSANCTR STMicroelectronics
Description: DGTL ISO 2.83KV 1CH GATE DVR 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C, Current - Peak Output: 4A, Technology: Capacitive Coupling, Voltage - Isolation: 2830Vrms, Approval Agency: UL, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 30ns, 30ns, Common Mode Transient Immunity (Min): 100V/ns, Pulse Width Distortion (Max): 20ns, Grade: Automotive, Number of Channels: 1, Voltage - Output Supply: 3.1V ~ 5.25V, Qualification: AEC-Q100.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| STGAP2SICSANCTR | Hersteller : STMicroelectronics |
Description: DGTL ISO 2.83KV 1CH GATE DVR 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4A Technology: Capacitive Coupling Voltage - Isolation: 2830Vrms Approval Agency: UL Supplier Device Package: 8-SO Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 100V/ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 3.1V ~ 5.25V Qualification: AEC-Q100 |
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