STGAP2SICSN STMicroelectronics



Hersteller: STMicroelectronics
Description: DIGITAL ISO 4KV 1CH GATE DVR 8SO
Voltage - Output Supply: 16.4V ~ 26V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Common Mode Transient Immunity (Min): 100V/ns
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Approval Agency: UL
Voltage - Isolation: 4000Vrms
Current - Output High, Low: 4A, 4A
Technology: Capacitive Coupling
Current - Peak Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STGAP2SICSN STMicroelectronics

Description: DIGITAL ISO 4KV 1CH GATE DVR 8SO, Voltage - Output Supply: 16.4V ~ 26V, Number of Channels: 1, Part Status: Active, Pulse Width Distortion (Max): 20ns, Propagation Delay tpLH / tpHL (Max): 90ns, 90ns, Common Mode Transient Immunity (Min): 100V/ns, Rise / Fall Time (Typ): 30ns, 30ns, Supplier Device Package: 8-SO, Approval Agency: UL, Voltage - Isolation: 4000Vrms, Current - Output High, Low: 4A, 4A, Technology: Capacitive Coupling, Current - Peak Output: 4A, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.

Weitere Produktangebote STGAP2SICSN

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STGAP2SICSN STGAP2SICSN Hersteller : STMicroelectronics Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH