STGAP2SICSN STMicroelectronics
Hersteller: STMicroelectronics
Description: DIGITAL ISO 4KV 1CH GATE DVR 8SO
Voltage - Output Supply: 16.4V ~ 26V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Common Mode Transient Immunity (Min): 100V/ns
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Approval Agency: UL
Voltage - Isolation: 4000Vrms
Current - Output High, Low: 4A, 4A
Technology: Capacitive Coupling
Current - Peak Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Technische Details STGAP2SICSN STMicroelectronics
Description: DIGITAL ISO 4KV 1CH GATE DVR 8SO, Voltage - Output Supply: 16.4V ~ 26V, Number of Channels: 1, Part Status: Active, Pulse Width Distortion (Max): 20ns, Propagation Delay tpLH / tpHL (Max): 90ns, 90ns, Common Mode Transient Immunity (Min): 100V/ns, Rise / Fall Time (Typ): 30ns, 30ns, Supplier Device Package: 8-SO, Approval Agency: UL, Voltage - Isolation: 4000Vrms, Current - Output High, Low: 4A, 4A, Technology: Capacitive Coupling, Current - Peak Output: 4A, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.
Weitere Produktangebote STGAP2SICSN
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Verfügbarkeit |
Preis |
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STGAP2SICSN | Hersteller : STMicroelectronics | Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs |
Produkt ist nicht verfügbar |
