STGB10NC60KDT4 STMicroelectronics
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 139+ | 1.08 EUR |
| 141+ | 1.03 EUR |
| 143+ | 0.97 EUR |
| 250+ | 0.92 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.82 EUR |
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Technische Details STGB10NC60KDT4 STMicroelectronics
Description: IGBT 600V 20A 65W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 22 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 17ns/72ns, Switching Energy: 55µJ (on), 85µJ (off), Test Condition: 390V, 5A, 10Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 65 W.
Weitere Produktangebote STGB10NC60KDT4 nach Preis ab 0.78 EUR bis 3.63 EUR
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
IGBTs N-channel MOSFET |
auf Bestellung 1646 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 20A 65W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
auf Bestellung 587 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB10NC60KDT4 Produktcode: 155948
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Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 20A 65W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
Produkt ist nicht verfügbar |
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| STGB10NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |