STGB10NC60KDT4
Produktcode: 155948
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Lieblingsprodukt
Hersteller:
Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote STGB10NC60KDT4 nach Preis ab 1 EUR bis 4.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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STGB10NC60KDT4 | STMicroelectronics |
Description: IGBT 600V 20A 65W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB10NC60KDT4 | STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NC60KDT4 | STMicroelectronics |
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NC60KDT4 | STMicroelectronics |
Description: IGBT 600V 20A 65W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
auf Bestellung 1754 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB10NC60KDT4 | STMicroelectronics |
IGBTs N-channel MOSFET |
auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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STGB10NC60KDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 972 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGB10NC60KDT4 |
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Hersteller: STMicroelectronics
Description: IGBT 600V 20A 65W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
Description: IGBT 600V 20A 65W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.29 EUR |
| STGB10NC60KDT4 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 130+ | 1.38 EUR |
| 133+ | 1.34 EUR |
| 135+ | 1.3 EUR |
| 250+ | 1.25 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.17 EUR |
| STGB10NC60KDT4 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R
Trans IGBT Chip N-CH 600V 20A 65W 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 128+ | 1.4 EUR |
| 130+ | 1.33 EUR |
| 133+ | 1.26 EUR |
| 135+ | 1.2 EUR |
| 250+ | 1.13 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 1 EUR |
| STGB10NC60KDT4 |
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Hersteller: STMicroelectronics
Description: IGBT 600V 20A 65W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
Description: IGBT 600V 20A 65W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.05 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.4 EUR |
| STGB10NC60KDT4 |
|
Hersteller: STMicroelectronics
IGBTs N-channel MOSFET
IGBTs N-channel MOSFET
auf Bestellung 1933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 2.7 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.33 EUR |
| 2000+ | 1.25 EUR |
| 5000+ | 1.18 EUR |
| STGB10NC60KDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)