STGB20NB32LZ
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auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STGB20NB32LZ
Description: IGBT 375V 40A 150W I2PAK, Power - Max: 150 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 375 V, Current - Collector (Ic) (Max): 40 A, Gate Charge: 51 nC, Test Condition: 250V, 20A, 1kOhm, 4.5V, Switching Energy: 11.8mJ (off), Td (on/off) @ 25°C: 2.3µs/11.5µs, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB20NB32LZ | Hersteller : STMicroelectronics |
Description: IGBT 375V 40A 150W I2PAK Power - Max: 150 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 375 V Current - Collector (Ic) (Max): 40 A Gate Charge: 51 nC Test Condition: 250V, 20A, 1kOhm, 4.5V Switching Energy: 11.8mJ (off) Td (on/off) @ 25°C: 2.3µs/11.5µs Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
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