STGB20NB37LZT4 STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT 425V 40A 200W D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 200 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 51 nC
Test Condition: 250V, 20A, 1kOhm, 4.5V
Switching Energy: 11.8mJ (off)
Td (on/off) @ 25°C: 2.3µs/2µs
Supplier Device Package: D2PAK
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Technische Details STGB20NB37LZT4 STMicroelectronics
Description: IGBT 425V 40A 200W D2PAK, Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Power - Max: 200 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 425 V, Current - Collector (Ic) (Max): 40 A, Gate Charge: 51 nC, Test Condition: 250V, 20A, 1kOhm, 4.5V, Switching Energy: 11.8mJ (off), Td (on/off) @ 25°C: 2.3µs/2µs, Supplier Device Package: D2PAK.
Weitere Produktangebote STGB20NB37LZT4
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STGB20NB37LZT4 | Hersteller : STMicroelectronics |
Description: IGBT 425V 40A 200W D2PAK Power - Max: 200 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 425 V Current - Collector (Ic) (Max): 40 A Gate Charge: 51 nC Test Condition: 250V, 20A, 1kOhm, 4.5V Switching Energy: 11.8mJ (off) Td (on/off) @ 25°C: 2.3µs/2µs Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
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STGB20NB37LZT4 | Hersteller : STMicroelectronics |
IGBT Transistors N-Ch Clamped 20 Amp |
Produkt ist nicht verfügbar |