STGB30V60F STMicroelectronics
Hersteller: STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
auf Bestellung 1000 Stücke:
Lieferzeit 614-628 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.68 EUR |
| 10+ | 6.03 EUR |
| 25+ | 5.69 EUR |
| 100+ | 4.84 EUR |
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Technische Details STGB30V60F STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, V S, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: D²PAK (TO-263), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/189ns, Switching Energy: 383µJ (on), 233µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 163 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGB30V60F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB30V60F | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(2+Tab) D2PAK T/R |
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STGB30V60F | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB30V60F | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 60A 260mW 3-Pin(2+Tab) D2PAK T/R |
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STGB30V60F | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, V S Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |
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STGB30V60F | Hersteller : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, V S Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: D²PAK (TO-263) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
Produkt ist nicht verfügbar |