Technische Details STGB3NB60SDT4 ST
Description: IGBT 600V 6A 70W D2PAK, Power - Max: 70 W, Current - Collector Pulsed (Icm): 25 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 6 A, Part Status: Obsolete, Gate Charge: 18 nC, Test Condition: 480V, 3A, 1kOhm, 15V, Switching Energy: 1.15mJ (off), Td (on/off) @ 25°C: 125ns/3.4µs, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A, Reverse Recovery Time (trr): 1.7 µs, Input Type: Standard, Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STGB3NB60SDT4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB3NB60SDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 6A 70W D2PAKPower - Max: 70 W Current - Collector Pulsed (Icm): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Part Status: Obsolete Gate Charge: 18 nC Test Condition: 480V, 3A, 1kOhm, 15V Switching Energy: 1.15mJ (off) Td (on/off) @ 25°C: 125ns/3.4µs Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A Reverse Recovery Time (trr): 1.7 µs Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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