STGB8NC60KDT4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: IGBT 600V 15A 65W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.98 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.23 EUR |
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Technische Details STGB8NC60KDT4 STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 23.5 ns, Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 17ns/72ns, Switching Energy: 55µJ (on), 85µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 65 W.
Weitere Produktangebote STGB8NC60KDT4 nach Preis ab 1.81 EUR bis 4 EUR
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STGB8NC60KDT4 Produktcode: 189599 |
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STGB8NC60KDT4 | Hersteller : STMicroelectronics |
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STGB8NC60KDT4 | Hersteller : STMicroelectronics |
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| STGB8NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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STGB8NC60KDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 15A 65W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23.5 ns Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/72ns Switching Energy: 55µJ (on), 85µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 65 W |
Produkt ist nicht verfügbar |
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| STGB8NC60KDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8A Power dissipation: 65W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |