Technische Details STGD19N40LZ STM
Description: IGBT 390V 25A DPAK, Power - Max: 125 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 390 V, Current - Collector (Ic) (Max): 25 A, Part Status: Active, Gate Charge: 17 nC, Test Condition: 300V, 10A, 1kOhm, 5V, Td (on/off) @ 25°C: 650ns/13.5µs, Supplier Device Package: DPAK, Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A, Input Type: Logic, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote STGD19N40LZ
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STGD19N40LZ | Hersteller : STMicroelectronics |
Description: IGBT 390V 25A DPAKPower - Max: 125 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector (Ic) (Max): 25 A Part Status: Active Gate Charge: 17 nC Test Condition: 300V, 10A, 1kOhm, 5V Td (on/off) @ 25°C: 650ns/13.5µs Supplier Device Package: DPAK Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A Input Type: Logic Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
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STGD19N40LZ | Hersteller : STMicroelectronics |
Description: IGBT 390V 25A DPAKPower - Max: 125 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector (Ic) (Max): 25 A Part Status: Active Gate Charge: 17 nC Test Condition: 300V, 10A, 1kOhm, 5V Td (on/off) @ 25°C: 650ns/13.5µs Supplier Device Package: DPAK Vce(on) (Max) @ Vge, Ic: 1.5V @ 4.5V, 10A Input Type: Logic Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
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STGD19N40LZ | Hersteller : STMicroelectronics |
IGBTs Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
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| STGD19N40LZ | Hersteller : STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 390V; 25A; 125W; DPAK; ignition systems; ESD Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 25A Power dissipation: 125W Case: DPAK Pulsed collector current: 40A Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: internally clamped; logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |


