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STGD3NC120H-1 STMicroelectronics


dm00058186-1797590.pdf Hersteller: STMicroelectronics
IGBT Transistors PTD IGBT & IPM
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Technische Details STGD3NC120H-1 STMicroelectronics

Description: IGBT 1200V 16A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: IPAK (TO-251), Td (on/off) @ 25°C: 15ns/118ns, Switching Energy: 236µJ (on), 290µJ (off), Test Condition: 800V, 3A, 10Ohm, 15V, Gate Charge: 24 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 105 W.

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STGD3NC120H-1 STGD3NC120H-1 Hersteller : STMicroelectronics dm0005818.pdf Trans IGBT Chip N-CH 1200V 16A 105000mW 3-Pin(3+Tab) IPAK Tube
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STGD3NC120H-1 Hersteller : STMicroelectronics Description: IGBT 1200V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: IPAK (TO-251)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 105 W
Produkt ist nicht verfügbar