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STGD3NC120H-1 STMicroelectronics


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Hersteller: STMicroelectronics
IGBT Transistors PTD IGBT & IPM
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Technische Details STGD3NC120H-1 STMicroelectronics

Description: IGBT 1200V 16A IPAK, Power - Max: 105 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 16 A, Part Status: Obsolete, Gate Charge: 24 nC, Test Condition: 800V, 3A, 10Ohm, 15V, Switching Energy: 236µJ (on), 290µJ (off), Td (on/off) @ 25°C: 15ns/118ns, Supplier Device Package: IPAK (TO-251), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Current - Collector Pulsed (Icm): 20 A.

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STGD3NC120H-1 Hersteller : STMicroelectronics Description: IGBT 1200V 16A IPAK
Power - Max: 105 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 16 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 800V, 3A, 10Ohm, 15V
Switching Energy: 236µJ (on), 290µJ (off)
Td (on/off) @ 25°C: 15ns/118ns
Supplier Device Package: IPAK (TO-251)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Current - Collector Pulsed (Icm): 20 A
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