STGD6NC60HDT4 STMicroelectronics
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.83 EUR |
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Technische Details STGD6NC60HDT4 STMicroelectronics
Description: IGBT 600V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 12ns/76ns, Switching Energy: 20µJ (on), 68µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 13.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 21 A, Power - Max: 56 W.
Weitere Produktangebote STGD6NC60HDT4 nach Preis ab 0.7 EUR bis 2.73 EUR
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 56W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 56W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1812 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 56W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 56W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1812 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 21 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Supplier Device Package: DPAK Td (on/off) @ 25°C: 12ns/76ns Switching Energy: 20µJ (on), 68µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 13.6 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 56 W |
auf Bestellung 1840 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
IGBTs PowerMESH" IGBT |
auf Bestellung 919 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGD6NC60HDT4 | Hersteller : ST |
IGBT 600V 15A 56W STGD6NC60HDT4 STMicroelectronics TSTGD6nc60hdt4 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STGD6NC60HDT4 | Hersteller : STMicroelectronics |
Description: IGBT 600V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 21 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Supplier Device Package: DPAK Td (on/off) @ 25°C: 12ns/76ns Switching Energy: 20µJ (on), 68µJ (off) Test Condition: 390V, 3A, 10Ohm, 15V Gate Charge: 13.6 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 56 W |
Produkt ist nicht verfügbar |