Technische Details STGD6NC60HDT4 STMicroelectronics
Description: IGBT 600V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 12ns/76ns, Switching Energy: 20µJ (on), 68µJ (off), Test Condition: 390V, 3A, 10Ohm, 15V, Gate Charge: 13.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 21 A, Power - Max: 56 W.
Weitere Produktangebote STGD6NC60HDT4 nach Preis ab 0.63 EUR bis 3.36 EUR
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STGD6NC60HDT4 | STMicroelectronics |
 Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | STMicroelectronics |
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 56W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 56W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 21A Mounting: SMD Gate charge: 13.6nC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1608 Stücke: Lieferzeit 14-21 Tag (e) |
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STGD6NC60HDT4 | STMicroelectronics |
Description: IGBT 600V 15A DPAK Power - Max: 56 W Current - Collector Pulsed (Icm): 21 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Part Status: Active Gate Charge: 13.6 nC Test Condition: 390V, 3A, 10Ohm, 15V Switching Energy: 20µJ (on), 68µJ (off) Td (on/off) @ 25°C: 12ns/76ns Supplier Device Package: DPAK Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Reverse Recovery Time (trr): 21 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1589 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGD6NC60HDT4 |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.63 EUR |
| STGD6NC60HDT4 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.75 EUR |
| STGD6NC60HDT4 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 600V 15A 56W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.75 EUR |
| STGD6NC60HDT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 56W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 56W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1608 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.65 EUR |
| 70+ | 1.23 EUR |
| 80+ | 1.07 EUR |
| STGD6NC60HDT4 |
|
Hersteller: STMicroelectronics
Description: IGBT 600V 15A DPAK
Power - Max: 56 W
Current - Collector Pulsed (Icm): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 13.6 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 20µJ (on), 68µJ (off)
Td (on/off) @ 25°C: 12ns/76ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: IGBT 600V 15A DPAK
Power - Max: 56 W
Current - Collector Pulsed (Icm): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 13.6 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 20µJ (on), 68µJ (off)
Td (on/off) @ 25°C: 12ns/76ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.01 EUR |