STGF10NB60SD STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 25W; TO220FP
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO220FP
Kind of package: tube
Gate charge: 33nC
Collector current: 23A
Pulsed collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 25W
Type of transistor: IGBT
Collector-emitter voltage: 600V
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 2.62 EUR |
| 39+ | 1.84 EUR |
| 41+ | 1.74 EUR |
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Technische Details STGF10NB60SD STMicroelectronics
Description: IGBT 600V 23A TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A, Supplier Device Package: TO-220FP, Td (on/off) @ 25°C: 700ns/1.2µs, Switching Energy: 600µJ (on), 5mJ (off), Test Condition: 480V, 10A, 1kOhm, 15V, Gate Charge: 33 nC, Part Status: Active, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 25 W.
Weitere Produktangebote STGF10NB60SD nach Preis ab 1 EUR bis 3.48 EUR
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STGF10NB60SD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 23A; 25W; TO220FP Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Case: TO220FP Kind of package: tube Gate charge: 33nC Collector current: 23A Pulsed collector current: 80A Gate-emitter voltage: ±20V Power dissipation: 25W Type of transistor: IGBT Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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STGF10NB60SD | Hersteller : STMicroelectronics |
Description: IGBT 600V 23A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A Supplier Device Package: TO-220FP Td (on/off) @ 25°C: 700ns/1.2µs Switching Energy: 600µJ (on), 5mJ (off) Test Condition: 480V, 10A, 1kOhm, 15V Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 25 W |
auf Bestellung 794 Stücke: Lieferzeit 10-14 Tag (e) |
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STGF10NB60SD | Hersteller : STMicroelectronics |
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STGF10NB60SD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 23A 25000mW 3-Pin(3+Tab) TO-220FP Tube |
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STGF10NB60SD Produktcode: 175402
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STGF10NB60SD | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 23A 25W 3-Pin(3+Tab) TO-220FP Tube |
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