Technische Details STGF20M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/108ns, Switching Energy: 140µJ (on), 560µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 63 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 32.6 W.
Weitere Produktangebote STGF20M65DF2 nach Preis ab 0.97 EUR bis 3.8 EUR
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STGF20M65DF2 | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 40A 32.6W 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF20M65DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 32.6W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 32.6W Pulsed collector current: 80A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 63nC |
auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
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STGF20M65DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss |
auf Bestellung 478 Stücke: Lieferzeit 10-14 Tag (e) |
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STGF20M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 40A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 166 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/108ns Switching Energy: 140µJ (on), 560µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 32.6 W |
auf Bestellung 1397 Stücke: Lieferzeit 10-14 Tag (e) |
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| STGF20M65DF2 |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 40A 32.6W 3-Pin(3+Tab) TO-220FP Tube
Trans IGBT Chip N-CH 650V 40A 32.6W 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.97 EUR |
| STGF20M65DF2 |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 32.6W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 32.6W
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 63nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 32.6W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 32.6W
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 63nC
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 33+ | 2.22 EUR |
| 41+ | 1.76 EUR |
| 58+ | 1.24 EUR |
| 100+ | 1.23 EUR |
| STGF20M65DF2 |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |
| 2000+ | 1.16 EUR |
| STGF20M65DF2 |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32.6 W
Description: IGBT TRENCH FS 650V 40A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32.6 W
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.8 EUR |
| 50+ | 1.85 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.22 EUR |