STGF30H65DFB2 STMICROELECTRONICS
Hersteller: STMICROELECTRONICSDescription: STMICROELECTRONICS - STGF30H65DFB2 - IGBT, 50 A, 1.65 V, 50 W, 650 V, TO-220FP, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 50W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: HB2
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 50A
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
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Technische Details STGF30H65DFB2 STMICROELECTRONICS
Description: IGBT TRENCH FS 650V 50A TO-220FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-220FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18.4ns/71ns, Switching Energy: 270µJ (on), 310µJ (off), Test Condition: 400V, 30A, 6.8Ohm, 15V, Gate Charge: 90 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 50 W.
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STGF30H65DFB2 | Hersteller : STMicroelectronics |
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| STGF30H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 50W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
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STGF30H65DFB2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 50A TO-220FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18.4ns/71ns Switching Energy: 270µJ (on), 310µJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 50 W |
Produkt ist nicht verfügbar |
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| STGF30H65DFB2 | Hersteller : STMicroelectronics | IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT |
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| STGF30H65DFB2 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 50W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |