STGHU30M65DF2AG STMicroelectronics
Hersteller: STMicroelectronicsIGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.81 EUR |
| 10+ | 4.88 EUR |
| 25+ | 4.59 EUR |
| 100+ | 3.94 EUR |
| 250+ | 3.73 EUR |
| 600+ | 3.52 EUR |
| 1200+ | 2.99 EUR |
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Technische Details STGHU30M65DF2AG STMicroelectronics
Description: IGBT TRENCH FS 650V 84A HU3PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 223 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: HU3PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/151ns, Switching Energy: 210µJ (on), 1.147mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 90 nC, Grade: Automotive, Current - Collector (Ic) (Max): 84 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 441 W, Qualification: AEC-Q101.
Weitere Produktangebote STGHU30M65DF2AG
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STGHU30M65DF2AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGHU30M65DF2AG - IGBT, AEC-Q101, 84 A, 1.6 V, 441 W, 650 V, HU3PAK, 7 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 441W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: M Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 84A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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STGHU30M65DF2AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGHU30M65DF2AG - IGBT, AEC-Q101, 84 A, 1.6 V, 441 W, 650 V, HU3PAK, 7 Pin(s) tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGHU30M65DF2AG | Hersteller : STMicroelectronics |
STGHU30M65DF2AG |
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STGHU30M65DF2AG | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 84A HU3PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 223 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: HU3PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/151ns Switching Energy: 210µJ (on), 1.147mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 90 nC Grade: Automotive Current - Collector (Ic) (Max): 84 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 441 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STGHU30M65DF2AG | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 84A HU3PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 223 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: HU3PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/151ns Switching Energy: 210µJ (on), 1.147mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 90 nC Grade: Automotive Current - Collector (Ic) (Max): 84 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 441 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |