STGP15H60DF STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 101+ | 1.56 EUR |
| 103+ | 1.47 EUR |
| 107+ | 1.36 EUR |
| 200+ | 1.28 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.14 EUR |
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Technische Details STGP15H60DF STMicroelectronics
Description: IGBT 600V 30A 115W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24.5ns/118ns, Switching Energy: 136µJ (on), 207µJ (off), Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 81 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 115 W.
Weitere Produktangebote STGP15H60DF nach Preis ab 2.26 EUR bis 5.02 EUR
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STGP15H60DF | Hersteller : STMicroelectronics |
 Description: IGBT 600V 30A 115W TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 115 W |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP15H60DF | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate H series 600V 15A HiSpd |
auf Bestellung 1326 Stücke: Lieferzeit 14-28 Tag (e) |
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STGP15H60DF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP15H60DF - IGBT, 30 A, 1.6 V, 115 W, 600 V, TO-220, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: Trench H Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 911 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP15H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP15H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 30A 115W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP15H60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STGP15H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 30W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 30W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 81nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGP15H60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 30W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 30W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 81nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |