STGP19NC60HD STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 3.98 EUR |
19+ | 3.76 EUR |
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Produktbewertung abgeben
Technische Details STGP19NC60HD STMicroelectronics
Description: IGBT 600V 40A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 25ns/97ns, Switching Energy: 85µJ (on), 189µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 130 W.
Weitere Produktangebote STGP19NC60HD nach Preis ab 2.06 EUR bis 6.58 EUR
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STGP19NC60HD | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 130W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 130W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 31nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP19NC60HD | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 25ns/97ns Switching Energy: 85µJ (on), 189µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 130 W |
auf Bestellung 14817 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP19NC60HD | Hersteller : STMicroelectronics | IGBT Transistors 19 A - 600 V very fast IGBT |
auf Bestellung 2956 Stücke: Lieferzeit 14-28 Tag (e) |
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STGP19NC60HD Produktcode: 183916 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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STGP19NC60HD | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 40A 130W 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP19NC60HD | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP19NC60HD | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |