STGP19NC60SD STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT 600V 40A TO-220
Power - Max: 130 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 54.5 nC
Test Condition: 480V, 12A, 10Ohm, 15V
Switching Energy: 135µJ (on), 815µJ (off)
Td (on/off) @ 25°C: 17.5ns/175ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
Reverse Recovery Time (trr): 31 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.01 EUR |
| 50+ | 2.99 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.19 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details STGP19NC60SD STMicroelectronics
Description: IGBT 600V 40A TO-220, Power - Max: 130 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 54.5 nC, Test Condition: 480V, 12A, 10Ohm, 15V, Switching Energy: 135µJ (on), 815µJ (off), Td (on/off) @ 25°C: 17.5ns/175ns, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A, Reverse Recovery Time (trr): 31 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STGP19NC60SD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STGP19NC60SD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 130W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 54.5nC Kind of package: tube |
auf Bestellung 458 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGP19NC60SD |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 54.5nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 54.5nC
Kind of package: tube
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)