STGP19NC60SD STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 130W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 130W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 54.5nC
Kind of package: tube
| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 44+ | 1.63 EUR |
| 53+ | 1.37 EUR |
| 59+ | 1.23 EUR |
| 100+ | 1.17 EUR |
| 200+ | 1.13 EUR |
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Technische Details STGP19NC60SD STMicroelectronics
Description: IGBT 600V 40A TO-220, Power - Max: 130 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 54.5 nC, Test Condition: 480V, 12A, 10Ohm, 15V, Switching Energy: 135µJ (on), 815µJ (off), Td (on/off) @ 25°C: 17.5ns/175ns, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A, Reverse Recovery Time (trr): 31 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STGP19NC60SD nach Preis ab 1.71 EUR bis 4.7 EUR
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STGP19NC60SD | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A TO-220 Power - Max: 130 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Part Status: Active Gate Charge: 54.5 nC Test Condition: 480V, 12A, 10Ohm, 15V Switching Energy: 135µJ (on), 815µJ (off) Td (on/off) @ 25°C: 17.5ns/175ns Supplier Device Package: TO-220 Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A Reverse Recovery Time (trr): 31 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
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STGP19NC60SD | Hersteller : STMicroelectronics |
IGBTs N-chnl 600V-20A Med Freq |
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