STGW100H65FB2-4 STMicroelectronics
Hersteller: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP, 650 V, 1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/141ns
Switching Energy: 1.06mJ (on), 1.14mJ (off)
Test Condition: 400V, 100A, 3.3Ohm, 15V
Gate Charge: 288 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 441 W
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 13.57 EUR |
| 30+ | 10.84 EUR |
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Technische Details STGW100H65FB2-4 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 650 V, 1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/141ns, Switching Energy: 1.06mJ (on), 1.14mJ (off), Test Condition: 400V, 100A, 3.3Ohm, 15V, Gate Charge: 288 nC, Part Status: Active, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 441 W.
Weitere Produktangebote STGW100H65FB2-4 nach Preis ab 10.84 EUR bis 20.2 EUR
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STGW100H65FB2-4 | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT |
auf Bestellung 45 Stücke: Lieferzeit 14-28 Tag (e) |
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STGW100H65FB2-4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW100H65FB2-4 - IGBT, 145 A, 1.55 V, 441 W, 650 V, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: HB2 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 145A |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW100H65FB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 145A 441000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW100H65FB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 145A 441W 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW100H65FB2-4 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 145A 441W 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGW100H65FB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STGW100H65FB2-4 | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |