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STGW15H120F2

STGW15H120F2 STMicroelectronics


1660912464996219dm0010.pdf Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details STGW15H120F2 STMicroelectronics

Description: IGBT H-SERIES 1200V 15A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/111ns, Switching Energy: 380µJ (on), 370µJ (off), Test Condition: 600V, 15A, 10Ohm, 15V, Gate Charge: 67 nC, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 259 W.

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STGW15H120F2 Hersteller : STMicroelectronics 1660912464996219dm0010.pdf Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
STGW15H120F2 Hersteller : STMicroelectronics en.DM00109377.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
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STGW15H120F2 STGW15H120F2 Hersteller : STMicroelectronics en.DM00109377.pdf Description: IGBT H-SERIES 1200V 15A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
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STGW15H120F2 STGW15H120F2 Hersteller : STMicroelectronics dm00109377-1798302.pdf IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STGW15H120F2 Hersteller : STMicroelectronics en.DM00109377.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Produkt ist nicht verfügbar