STGW30H65FB STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.27 EUR |
| 22+ | 3.95 EUR |
| 26+ | 3.3 EUR |
| 30+ | 3.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGW30H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/146ns, Switching Energy: 151µJ (on), 293µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 149 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 260 W.
Weitere Produktangebote STGW30H65FB nach Preis ab 3.2 EUR bis 7.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STGW30H65FB | STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT |
auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
STGW30H65FB | STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 151µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STGW30H65FB |
![]() |
Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.58 EUR |
| 10+ | 6.26 EUR |
| 25+ | 5.21 EUR |
| 100+ | 4.49 EUR |
| 250+ | 4 EUR |
| 600+ | 3.39 EUR |
| 1200+ | 3.2 EUR |
| STGW30H65FB |
![]() |
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 650V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.98 EUR |
| 30+ | 4.41 EUR |



