Technische Details STGW30H65FB STMicroelectronics
Description: STMICROELECTRONICS - STGW30H65FB - IGBT, 60 A, 1.55 V, 260 W, 650 V, TO-247, 3 Pin(s), tariffCode: 85412900, Transistormontage: Durchsteckmontage, rohsCompliant: YES, hazardous: false, rohsPhthalatesCompliant: YES, Kollektor-Emitter-Sättigungsspannung: 1.55V, usEccn: EAR99, euEccn: NLR, Verlustleistung: 260W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: Trench HB Series, Kollektor-Emitter-Spannung, max.: 650V, productTraceability: Yes-Date/Lot Code, Betriebstemperatur, max.: 175°C, Kontinuierlicher Kollektorstrom: 60A, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote STGW30H65FB nach Preis ab 2.43 EUR bis 8.5 EUR
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STGW30H65FB | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW30H65FB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 149nC Kind of package: tube |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW30H65FB | STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT |
auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW30H65FB | STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/146ns Switching Energy: 151µJ (on), 293µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW30H65FB | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW30H65FB - IGBT, 60 A, 1.55 V, 260 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 260W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: Trench HB Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1156 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW30H65FB |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 2.43 EUR |
| STGW30H65FB |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.27 EUR |
| 22+ | 3.95 EUR |
| 26+ | 3.3 EUR |
| 30+ | 3.13 EUR |
| STGW30H65FB |
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Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
IGBT Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.58 EUR |
| 10+ | 6.26 EUR |
| 25+ | 5.21 EUR |
| 100+ | 4.49 EUR |
| 250+ | 4 EUR |
| 600+ | 3.39 EUR |
| 1200+ | 3.2 EUR |
| STGW30H65FB |
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Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 650V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 151µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.98 EUR |
| 30+ | 4.41 EUR |
| STGW30H65FB |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW30H65FB - IGBT, 60 A, 1.55 V, 260 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 260W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Trench HB Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (23-Jan-2024)
Description: STMICROELECTRONICS - STGW30H65FB - IGBT, 60 A, 1.55 V, 260 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 260W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Trench HB Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 8.5 EUR |
| 48+ | 4.86 EUR |
| 100+ | 4.28 EUR |
| 500+ | 4.12 EUR |
| 1000+ | 3.92 EUR |