STGW30NC60KD

Hersteller: STMicroelectronics
IGBTs 30A 600v IGBT

Hersteller: STMicroelectronics
Description: IGBT 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/120ns
Switching Energy: 350µJ (on), 435µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 200 W

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW30NC60KD - IGBT, 60 A, 2.1 V, 200 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.1V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 200W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 60A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C

Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 125A
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode

Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube

Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube