STGW39NC60VD
Hersteller: ST
80A; 600V; 250W; IGBT STGW39NC60VD STMicroelectronics TSTGW39nc60vd
Anzahl je Verpackung: 2 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 10.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGW39NC60VD ST
Description: IGBT 600V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 45 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 33ns/178ns, Switching Energy: 333µJ (on), 537µJ (off), Test Condition: 390V, 30A, 10Ohm, 15V, Gate Charge: 126 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 220 A, Power - Max: 250 W.
Weitere Produktangebote STGW39NC60VD nach Preis ab 2.94 EUR bis 11 EUR
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STGW39NC60VD | STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW39NC60VD | STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW39NC60VD | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 220A Mounting: THT Gate charge: 126nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW39NC60VD | STMicroelectronics |
IGBTs N-CHANNEL MFT |
auf Bestellung 934 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW39NC60VD | STMicroelectronics |
Description: IGBT 600V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 33ns/178ns Switching Energy: 333µJ (on), 537µJ (off) Test Condition: 390V, 30A, 10Ohm, 15V Gate Charge: 126 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 250 W |
auf Bestellung 505 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW39NC60VD | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW39NC60VD - IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 2.5V MSL: - Verlustleistung: 250W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 600V productTraceability: No usEccn: EAR99 Betriebstemperatur, max.: 150°C |
auf Bestellung 1052 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW39NC60VD |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 4.49 EUR |
| STGW39NC60VD |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 4.5 EUR |
| STGW39NC60VD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.46 EUR |
| 15+ | 6.01 EUR |
| 16+ | 5.39 EUR |
| 19+ | 4.52 EUR |
| 30+ | 3.64 EUR |
| 60+ | 3.24 EUR |
| 120+ | 2.94 EUR |
| STGW39NC60VD |
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Hersteller: STMicroelectronics
IGBTs N-CHANNEL MFT
IGBTs N-CHANNEL MFT
auf Bestellung 934 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.25 EUR |
| 10+ | 5.81 EUR |
| 100+ | 4.06 EUR |
| 600+ | 3.64 EUR |
| STGW39NC60VD |
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Hersteller: STMicroelectronics
Description: IGBT 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 33ns/178ns
Switching Energy: 333µJ (on), 537µJ (off)
Test Condition: 390V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 250 W
Description: IGBT 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 33ns/178ns
Switching Energy: 333µJ (on), 537µJ (off)
Test Condition: 390V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 250 W
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.47 EUR |
| 30+ | 5.89 EUR |
| 120+ | 4.88 EUR |
| STGW39NC60VD |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW39NC60VD - IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.5V
MSL: -
Verlustleistung: 250W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Description: STMICROELECTRONICS - STGW39NC60VD - IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.5V
MSL: -
Verlustleistung: 250W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 11 EUR |
| 41+ | 5.71 EUR |
| 100+ | 4.34 EUR |
| 500+ | 4.01 EUR |
| 1000+ | 3.67 EUR |