STGW40H120DF2 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
| Anzahl | Preis |
|---|---|
| 9+ | 7.98 EUR |
| 10+ | 7.48 EUR |
| 11+ | 7.06 EUR |
| 12+ | 6.29 EUR |
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Technische Details STGW40H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO-247, Power - Max: 468 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 80 A, Part Status: Active, Gate Charge: 187 nC, Test Condition: 600V, 40A, 10Ohm, 15V, Switching Energy: 1mJ (on), 1.32mJ (off), Td (on/off) @ 25°C: 18ns/152ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Reverse Recovery Time (trr): 488 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STGW40H120DF2 nach Preis ab 5.65 EUR bis 13.53 EUR
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STGW40H120DF2 | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 1200V 80A TO-247 Power - Max: 468 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A Part Status: Active Gate Charge: 187 nC Test Condition: 600V, 40A, 10Ohm, 15V Switching Energy: 1mJ (on), 1.32mJ (off) Td (on/off) @ 25°C: 18ns/152ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Reverse Recovery Time (trr): 488 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW40H120DF2 | Hersteller : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed |
auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW40H120DF2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW40H120DF2 - IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 2.1V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 468W Bauform - Transistor: TO-247 Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 566 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGW40H120DF2 | Hersteller : STM |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |