STGW40H120DF2 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 600+ | 10.27 EUR |
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Technische Details STGW40H120DF2 STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 488 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/152ns, Switching Energy: 1mJ (on), 1.32mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 187 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 468 W.
Weitere Produktangebote STGW40H120DF2 nach Preis ab 7.2 EUR bis 17.61 EUR
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STGW40H120DF2 | STMicroelectronics |
 Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW40H120DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 1200V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 488 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/152ns Switching Energy: 1mJ (on), 1.32mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 187 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 468 W |
auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW40H120DF2 | STMicroelectronics |
IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed |
auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
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STGW40H120DF2 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW40H120DF2 - IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 2.1V MSL: MSL 1 - unbegrenzt Verlustleistung: 468W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Dauerkollektorstrom: 80A Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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STGW40H120DF2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STGW40H120DF2 |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 10.38 EUR |
| STGW40H120DF2 |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 488 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/152ns
Switching Energy: 1mJ (on), 1.32mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 187 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 468 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 488 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/152ns
Switching Energy: 1mJ (on), 1.32mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 187 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 468 W
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.89 EUR |
| 30+ | 8.62 EUR |
| STGW40H120DF2 |
|
Hersteller: STMicroelectronics
IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.1 EUR |
| 10+ | 16.09 EUR |
| 25+ | 9.37 EUR |
| 100+ | 7.9 EUR |
| 250+ | 7.25 EUR |
| STGW40H120DF2 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STGW40H120DF2 - IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.1V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 468W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: H
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STGW40H120DF2 - IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.1V
MSL: MSL 1 - unbegrenzt
Verlustleistung: 468W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 3Pin(s)
Produktpalette: H
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 17.61 EUR |
| 18+ | 12.92 EUR |
| 25+ | 8.73 EUR |
| 50+ | 8.06 EUR |
| 100+ | 7.34 EUR |
| 250+ | 7.2 EUR |
| STGW40H120DF2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)