STGW60H65FB STMicroelectronics
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 51ns/160ns
Switching Energy: 1.09mJ (on), 626µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 306 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 51ns/160ns
Switching Energy: 1.09mJ (on), 626µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 306 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
auf Bestellung 499 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.12 EUR |
30+ | 9.61 EUR |
120+ | 8.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGW60H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 51ns/160ns, Switching Energy: 1.09mJ (on), 626µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 306 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGW60H65FB
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STGW60H65FB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGW60H65FB - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A |
auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) |
||
STGW60H65FB Produktcode: 112850 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
|||
STGW60H65FB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
STGW60H65FB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
STGW60H65FB | Hersteller : STMicroelectronics | Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
STGW60H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
STGW60H65FB | Hersteller : STMicroelectronics | IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT |
Produkt ist nicht verfügbar |
||
STGW60H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube |
Produkt ist nicht verfügbar |