STGWA25S120DF3 STMicroelectronics
Hersteller: STMicroelectronics
IGBT Transistors Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
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Technische Details STGWA25S120DF3 STMicroelectronics
Description: IGBT 1200V 25A TO247-3L, Power - Max: 375 W, Current - Collector Pulsed (Icm): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Gate Charge: 80 nC, Test Condition: 600V, 25A, 15Ohm, 15V, Switching Energy: 830µJ (on), 2.37mJ (off), Td (on/off) @ 25°C: 31ns/147ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Reverse Recovery Time (trr): 265 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
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STGWA25S120DF3 | Hersteller : STMicroelectronics |
Description: IGBT 1200V 25A TO247-3L Power - Max: 375 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Gate Charge: 80 nC Test Condition: 600V, 25A, 15Ohm, 15V Switching Energy: 830µJ (on), 2.37mJ (off) Td (on/off) @ 25°C: 31ns/147ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Reverse Recovery Time (trr): 265 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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