STGWA40IH65DF STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.67 EUR |
| 54+ | 3.11 EUR |
| 120+ | 2.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWA40IH65DF STMicroelectronics
Description: TRENCH GATE FIELD-STOP 650 V 40, Power - Max: 238 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Part Status: Active, Gate Charge: 114 nC, Test Condition: 400V, 40A, 22Ohm, 15V, Switching Energy: 190µJ (off), Td (on/off) @ 25°C: -/210ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247 Long Leads, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STGWA40IH65DF nach Preis ab 3.13 EUR bis 6.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
STGWA40IH65DF | STMicroelectronics |
 Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
STGWA40IH65DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 238W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 238W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 114nC Kind of package: tube |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
|
|
STGWA40IH65DF | STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
|
| STGWA40IH65DF |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 4.39 EUR |
| 55+ | 3.13 EUR |
| STGWA40IH65DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 238W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 238W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 238W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 238W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5 EUR |
| STGWA40IH65DF |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 238W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 6.63 EUR |