STGWA50M65DF2 STMicroelectronics
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.01 EUR |
| 10+ | 6.72 EUR |
| 25+ | 4.95 EUR |
| 100+ | 4.19 EUR |
| 250+ | 3.89 EUR |
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Technische Details STGWA50M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 162 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/130ns, Switching Energy: 880µJ (on), 1.57mJ (off), Test Condition: 400V, 50A, 6.8Ohm, 15V, Gate Charge: 150 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 375 W.
Weitere Produktangebote STGWA50M65DF2 nach Preis ab 4.61 EUR bis 9.8 EUR
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STGWA50M65DF2 | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 650V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 162 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/130ns Switching Energy: 880µJ (on), 1.57mJ (off) Test Condition: 400V, 50A, 6.8Ohm, 15V Gate Charge: 150 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 375 W |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) |
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STGWA50M65DF2 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA50M65DF2 | Hersteller : STMicroelectronics |
STGWA50M65DF2 THT IGBT transistors |
Produkt ist nicht verfügbar |