STGWA60V60DF STMicroelectronics
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.11 EUR |
| 10+ | 3.96 EUR |
| 100+ | 2.76 EUR |
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Technische Details STGWA60V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 60ns/208ns, Switching Energy: 750µJ (on), 550µJ (off), Test Condition: 400V, 60A, 4.7Ohm, 15V, Gate Charge: 334 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGWA60V60DF nach Preis ab 2.77 EUR bis 7.15 EUR
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STGWA60V60DF | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 600V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 60ns/208ns Switching Energy: 750µJ (on), 550µJ (off) Test Condition: 400V, 60A, 4.7Ohm, 15V Gate Charge: 334 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
auf Bestellung 679 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWA60V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA60V60DF | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STGWA60V60DF | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |