Technische Details STGWT20H60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-3P, Power - Max: 167 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 40 A, Gate Charge: 115 nC, Test Condition: 400V, 20A, 10Ohm, 15V, Switching Energy: 209µJ (on), 261µJ (off), Td (on/off) @ 25°C: 42.5ns/177ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Reverse Recovery Time (trr): 90 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
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STGWT20H60DF | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 600V 40A TO-3PPower - Max: 167 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Gate Charge: 115 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 209µJ (on), 261µJ (off) Td (on/off) @ 25°C: 42.5ns/177ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3P Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Reverse Recovery Time (trr): 90 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
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