STGWT20H60DF STMicroelectronics
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWT20H60DF STMicroelectronics
Description: IGBT 600V 40A 167W TO3PF, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42.5ns/177ns, Switching Energy: 209µJ (on), 261µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 115 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 167 W.
Weitere Produktangebote STGWT20H60DF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STGWT20H60DF | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
|
 |
STGWT20H60DF | Hersteller : STMicroelectronics |
Description: IGBT 600V 40A 167W TO3PF Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42.5ns/177ns Switching Energy: 209µJ (on), 261µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 115 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
Produkt ist nicht verfügbar |