Technische Details STGWT30HP65FB STM
Description: IGBT TRENCH FS 650V 60A TO-3P, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 149 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 293µJ (off), Td (on/off) @ 25°C: -/146ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3P, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Reverse Recovery Time (trr): 140 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Power - Max: 260 W.
Weitere Produktangebote STGWT30HP65FB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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STGWT30HP65FB | STMicroelectronics |
 Description: IGBT TRENCH FS 650V 60A TO-3PMounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Active Gate Charge: 149 nC Test Condition: 400V, 30A, 10Ohm, 15V Switching Energy: 293µJ (off) Td (on/off) @ 25°C: -/146ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3P Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Reverse Recovery Time (trr): 140 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 260 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STGWT30HP65FB | STMicroelectronics |
RF Bipolar Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STGWT30HP65FB |
|
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO-3P
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 149 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 293µJ (off)
Td (on/off) @ 25°C: -/146ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 260 W
Description: IGBT TRENCH FS 650V 60A TO-3P
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 149 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 293µJ (off)
Td (on/off) @ 25°C: -/146ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 260 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGWT30HP65FB |
|
Hersteller: STMicroelectronics
RF Bipolar Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
RF Bipolar Transistors Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH