STGWT40H65DFB STMicroelectronics
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 3.75 EUR |
| 49+ | 2.94 EUR |
| 120+ | 2.52 EUR |
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Technische Details STGWT40H65DFB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/142ns, Switching Energy: 498µJ (on), 363µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Weitere Produktangebote STGWT40H65DFB nach Preis ab 3.38 EUR bis 7.36 EUR
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STGWT40H65DFB | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 650V 80A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/142ns Switching Energy: 498µJ (on), 363µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
auf Bestellung 222 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT40H65DFB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWT40H65DFB - IGBT, 80 A, 1.6 V, 283 W, 650 V, TO-3P, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 283W Bauform - Transistor: TO-3P Anzahl der Pins: 3Pin(s) Produktpalette: 650V HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGWT40H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT40H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube |
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STGWT40H65DFB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT40H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STGWT40H65DFB | Hersteller : STMicroelectronics |
IGBTs 650V 40A HSpd trench gate field-stop IGB |
Produkt ist nicht verfügbar |
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| STGWT40H65DFB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |