STGWT40HP65FB STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO3P
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.7 EUR |
| 22+ | 3.35 EUR |
| 28+ | 2.59 EUR |
| 30+ | 2.46 EUR |
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Technische Details STGWT40HP65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/142ns, Switching Energy: 363µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.
Weitere Produktangebote STGWT40HP65FB nach Preis ab 2.46 EUR bis 7.59 EUR
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STGWT40HP65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO3P Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT40HP65FB | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 80A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/142ns Switching Energy: 363µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
auf Bestellung 630 Stücke: Lieferzeit 21-28 Tag (e) |
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STGWT40HP65FB | Hersteller : STMicroelectronics |
IGBT Transistors Trench gate field-stop 650 V, 40 A high-speed HB series IGBT |
auf Bestellung 146 Stücke: Lieferzeit 14-28 Tag (e) |
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STGWT40HP65FB | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGWT40HP65FB - IGBT, 80 A, 1.6 V, 283 W, 650 V, TO-3P, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 283W Bauform - Transistor: TO-3P Anzahl der Pins: 3Pin(s) Produktpalette: HB Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 80A |
auf Bestellung 585 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWT40HP65FB Produktcode: 148933 |
Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-3P Vces: 650 V Vce: 1,7 V Ic 25: 80 A Ic 100: 40 A td(on)/td(off) 100-150 Grad: /142 |
Produkt ist nicht verfügbar
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STGWT40HP65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| STGWT40HP65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |