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STGWT40V60DLF

STGWT40V60DLF STMicroelectronics

Hersteller: STMicroelectronics
Description: IGBT 600V 80A 283W TO3P-3
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/208ns
Switching Energy: 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
auf Bestellung 292 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.85 EUR
10+ 8.28 EUR
100+ 6.7 EUR
Mindestbestellmenge: 3
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Technische Details STGWT40V60DLF STMicroelectronics

Description: IGBT 600V 80A 283W TO3P-3, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/208ns, Switching Energy: 411µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 226 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 283 W.

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STGWT40V60DLF STGWT40V60DLF Hersteller : STMicroelectronics stgw40v60dlf-956048.pdf IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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